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  Datasheet File OCR Text:
 TENTATIVE
IGBT MODULE
CIRCUIT
Single 1200A 1200V
OUTLINE DRAWING
PHMB1200B12
4- fasten- tab No 110
Dimension(mm)
Approximate Weight : 1,200g
MAXMUM RATINGS (Tc=25C) Item
Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms
Symbol
VCES VGES IC ICP PC Tj Tstg VISO FTOR M4 M8
PHMB1200B12
1200 +/ - 20 1200 2400 5600 -40 to +150 -40 to +125 2500 3 1.4 10.5
Unit
V V A W C C V N*m
Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heat sink Mounting Torque Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (Tc=25C) Characteristic
Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time
Symbol
ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff
Test Condition
VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=1200A,VGE=15V VCE=5V,IC=400mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 0.5 ohm RG= 0.33 ohm VGE= +/- 15V
Min.
4.0 -
Typ.
1.9 100000 0.25 0.40 0.25 1.00
Max.
24 1.0 2.4 8.0 0.45 0.70 0.35 1.50
Unit mA A V V pF s
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Item Symbol Rated Value
Forward Current DC 1 ms IF IFM 1200 2400
Unit A Typ.
1.9 0.4
Characteristic
Peak Forward Voltage Reverse Recovery Time
Symbol
VF trr
Test Condition
IF=1200A,VGE=0V IF=1200A,VGE=-10V,di/dt=2400A/s
Min.
-
Max.
2.4 0.5
Unit V s Unit C/W
THERMAL CHARACTERISTICS Characteristic
Thermal Impedance IGBT DIODE
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min.
-
Typ.
-
Max.
0.022 0.043
TENTATIVE
PHMB1200B12
TENTATIVE
PHMB1200B12


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